to-220-3l plastic-encapsulate diodes mbr1030ct, 35ct, 40ct, 45ct, 50ct, 60ct schottky barrier rectifier features z schottky barrier chip z guard ring die construction for transient protection z low power loss,high efficiency z high surge capability z high current capability and low forward voltage drop z for use in low voltage, high fr equency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter mbr 1030ct mbr 1035ct mbr 1040ct mbr 1045ct mbr 1050ct mbr 1060ct unit v rrm peak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current@ t c =105 10 a i fsm non-repetitive peak forward surge current 8.3ms half sine wave 125 a p d power dissipation 2 w r ja thermal resistance from junction to ambient 50 /w t j junction temperature 125 t stg storage temperature -55~+150 to-220-3l 1. anode 2. cathode 3. a node 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symbol device test conditions min typ max unit mbr1030ct 30 mbr1035ct 35 MBR1040CT 40 mbr1045ct 45 mbr1050ct 50 reverse voltage v (br) mbr1060ct i r =0.1ma 60 v mbr1030ct v r =30v mbr1035ct v r =35v MBR1040CT v r =40v mbr1045ct v r =45v mbr1050ct v r =50v reverse current i r mbr1060ct v r =60v 0.1 ma mbr1030ct-1045ct 0.7 v f(1) mbr1050ct,1060ct i f =5a 0.8 mbr1030ct-1045ct 0.84 forward voltage v f(2) * mbr1050ct,1060ct i f =10a 0.95 v typical total capacitance c tot mbr1030ct-1060ct v r =4v,f=1mhz 150 pf *pulse test 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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